STPS20170CG-TR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS20170CG-TR Datasheet PDF : 8 Pages
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STPS20170C
Figure 7: Relative variation of thermal
impedance junction to case versus pulse
duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
(TO-220AB, I2PAK and D2PAK)
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03
(TO-220FPAB)
T
1.E-02
tp(s)
δ=tp/T
1.E-01
tp
1.E+00
Figure 8: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
IR(µA)
1.E+05
Tj=175°C
1.E+04
Tj=150°C
1.E+03
Tj=125°C
1.E+02
1.E+01
Tj=100°C
1.E+00
1.E-01
0
Tj=25°C
VR(V)
25
50
75
100
125
150
175
Figure 9: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
Figure 10: Forward voltage
forward current (per diode)
IFM(A)
100.0
drop
versus
Tj=125°C
(maximum values)
10.0
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
1.0
10
1
VR(V)
10
100
1000
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Figure 11: Thermal resistance junction to am-
bient versus copper surface under tab (epoxy
printed board FR4, Cu = 35µm) (D2PAK)
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
0
0
S(cm²)
5
10
15
20
25
30
35
40
4/8
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