TXDV608 View Datasheet(PDF) - STMicroelectronics
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Description
Manufacturer
TXDV608 Datasheet PDF : 5 Pages
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Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
P(W)
14
12
180 O
o
= 180
10
o
= 120
8
o
= 90
6
o
= 60
4
= 30 o
2
I T(RMS) (A)
0
0
1
2
3
4
5
6
7
8
Fig.3 : RMS on-state current versus case temperature.
TXDV 408 ---> 808
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
P (W)
14
12
10
Tcase (oC)
Rth = 0 o C/W
2o C/W
4o C/W
6 o C/W
-85
-90
-95
8
-100
-105
6
-110
4
-115
2
Tamb (oC)
-120
0
-125
0
20 40 60 80 100 120 140
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
I T(RMS)(A)
10
8
6
= 180o
4
2
Tcase(oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Zth/Rth
1
Zth(j-c)
0.1
Zth(j-a)
0.01
1E-3
1E-2
1E-1
1E+0
tp(s)
1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.
3/5
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