27-Bit, 3MHz-to-35MHz
DC-Balanced LVDS Serializer
ABSOLUTE MAXIMUM RATINGS
VCC_ to _GND........................................................-0.5V to +4.0V
Any Ground to Any Ground...................................-0.5V to +0.5V
OUT+, OUT- to LVDS GND ...................................-0.5V to +4.0V
OUT+, OUT- Short Circuit to LVDS GND
or VCCLVDS.............................................................Continuous
OUT+, OUT- Short Through 0.125µF (or smaller),
25V Series Capacitor..........................................-0.5V to +16V
RGB_IN[17:0], CNTL_IN[8:0], DE_IN,
RNG0, RNG1, PCLK_IN,
PWRDWN, CMF to GND......................-0.5V to (VCCIN + 0.5V)
Continuous Power Dissipation (TA = +70°C)
48-Lead LQFP (derate 21.7mW/°C above +70°C) ....1739mW
48-Lead Thin QFN (derate 37mW/°C above +70°C) .2963mW
ESD Protection
Machine Model (RD = 0Ω, CS = 200pF)
All Pins to GND ..............................................................±200V
Human Body Model (RD = 1.5kΩ, CS = 100pF)
All Pins to GND ................................................................±2kV
ISO 10605 (RD = 2kΩ, CS = 330pF)
Contact Discharge (OUT+, OUT-) to GND ....................±10kV
Air Discharge (OUT+, OUT-) to GND ............................±30kV
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(VCC_ = +3.0V to +3.6V, RL = 100Ω ±1%, PWRDWN = high, TA = -40°C to +85°C, unless otherwise noted. Typical values are at
VCC_ = +3.3V, TA = +25°C.) (Notes 1, 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
SINGLE-ENDED INPUTS (RGB_IN[17:0], CNTL_IN[8:0], DE_IN, PCLK_IN, PWRDWN, RNG_)
High-Level Input Voltage
VIH
VCCIN = 1.71V to <3V
0.65VCCIN
2
VCCIN + 0.3
VCCIN + 0.3
Low-Level Input Voltage
VIL
VCCIN = 1.71V to <3V
-0.3
0.3VCCIN
-0.3
+0.8
Input Current
VIN = -0.3V to (VCCIN + 0.3V),
IIN
VCCIN = 1.71V to 3.6V,
-70
+70
PWRDWN = high or low
Input Clamp Voltage
VCL
ICL = -18mA
-1.5
LVDS OUTPUTS (OUT+, OUT-)
Differential Output Voltage
VOD
Figure 1
250
335
450
Change in VOD Between
Complementary Output States
ΔVOD Figure 1
20
Common-Mode Voltage
Change in VOS Between
Complementary Output States
VOS
ΔVOS
Figure 1
Figure 1
1.125
1.29
1.375
20
Output Short-Circuit Current
Magnitude of Differential Output
Short-Circuit Current
IOS
IOSD
VOUT+ or VOUT- = 0 or 3.6V
VOD = 0
-15
±8
+15
5.5
15
VOUT+ = 0,
PWRDWN = low
VOUT- = 3.6V
Output High-Impedance Current
IOZ
or
-1
+1
VCC_ = 0
VOUT+ = 3.6V,
VOUT- = 0
UNITS
V
V
µA
V
mV
mV
V
mV
mA
mA
µA
2 _______________________________________________________________________________________