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STP75NE75 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP75NE75 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STP75NE75
®
STP75NE75FP
N - CHANNEL 75V - 0.01- 75A TO-220/TO-220FP
STripFETPOWER MOSFET
TYPE
V DSS
RDS(on)
STP75NE75
STP75NE75FP
75 V
75 V
< 0.013
< 0.013
s TYPICAL RDS(on) = 0.01
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
ID
75 A
40 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s DC MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain-source Volt age (VGS = 0)
Drain- gat e Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
dv/dt Peak Diode Recovery voltage slope
Ts tg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
May 1999
Va l u e
Un it
STP75NE75 STP75NE75FP
75
V
75
V
± 20
V
75
40
A
53
28
A
300
160
A
160
1.06
50
0.37
W
W /o C
2000
V
7
-65 to 175
175
( 1) ISD 75 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/9
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