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STB100NF04L View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STB100NF04L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STB100NF04L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 20 V
ID = 50 A
37
ns
tr
Rise Time
RG = 4.7
VGS = 4.5 V
270
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 32V ID= 100A VGS= 4.5V
72
90
nC
20
nC
28.5
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 20 V
D = 50 A
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 3)
Vclamp = 32 V
ID = 100 A
RG = 4.7Ω,
VGS = 4.5 V
(Inductive Load, Figure 5)
Min.
Typ.
90
80
85
125
160
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 100A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 100 A di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
88
240
5.5
Max.
100
400
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/9
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