STB70NF03L(2006) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STB70NF03L
(Rev.:2006)

N-channel 30V - 0.0075Ω - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STB70NF03L - STP70NF03L - STB70NF03L-1

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage (VGS = 0)

VDGR Drain-gate voltage (RGS = 20kΩ)

VGS

Gate- source voltage

ID

Drain current (continuous) at TC = 25°C

ID

IDM(1)

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

Derating factor

dv/dt (2) Peak diode recovery voltage slope

EAS (3) Single pulse avalanche energy

Tstg

Storage temperature

TJ

Operating junction temperature

1. Current limited by the package

2. ISD ≤70A, di/dt ≤350A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX

3. Starting TJ = 25 oC, ID = 35A, VDD = 25V

Table 2. Thermal data

Symbol

Parameter

RthJC

RthJA

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering

purpose

Electrical ratings

Value

30

30

± 18

70

50

280

100

0.67

5.5

500

-55 to 175

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

°C

Value

1.5

62.5

300

Unit

°C/W

°C/W

°C

3/15

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