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D100N03L-1 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
D100N03L-1 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
2
Electrical characteristics
STD100N03L - STD100N03L-1
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS = 0
30
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1 µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±200 nA
VGS(th) Gate threshold voltage
roduct(s) RDS(on)
Static drain-source on
resistance
VDS= VGS, ID = 250µA
VGS = 10V, ID = 40A
VGS = 5V, ID = 20A
VGS = 10 V,
ID = 40 A @125°C
VGS = 5 V,
ID = 20 A @125°C
1
V
0.0045 0.0055
0.008 0.01
0.0068
0.0146
lete P Table 5. Dynamic
o Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
bs gfs (1)
- O Ciss
t(s) Coss
Crss
duc Qg
ro Qgs
P Qgd
oleteRG
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
VDS = 10 V, ID = 15A
VDS = 25V, f = 1 MHz,
VGS = 0
VDD = 24V, ID = 80A
VGS = 5V
Figure 15 on page 9
f = 1MHz gate DC Bias = 0
Test signal level = 20mV
Open drain
31
S
2060
pF
728
pF
67
pF
20 27 nC
7
nC
7.5
nC
1.9
Obs 1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/15
 

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