D100N03L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
D100N03L
STMicroelectronics
D100N03L Datasheet PDF : 15 Pages
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STD100N03L - STD100N03L-1
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
VDGR
ID (1)
ID
IDM (2)
PTOT
Drain-source voltage (VGS = 0)
Drain-gate voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
30
V
± 20
V
80
A
70
A
320
A
110
W
0.73
W/°C
dv/dt (3) Peak diode recovery voltage slope
t(s) Tstg Storage temperature
TJ Max. operating junction temperature
uc 1. Current limited by package.
d 2. Pulse width limited by safe operating area
ro 3. ISD ≤80A, di/dt ≤360 A/µs, VDS ≤V(BR)DSS, TJ ≤TJMAX
te P Table 2. Thermal data
ole Symbol
Parameter
bs RthJC
O RthJA
t(s) - Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
uc Table 3. Avalanche characteristics
rod Symbol
Parameter
PNot-repetitive avalanche current
teIAR (pulse width limited by TJ max)
le Single pulsed avalanche energy
Obso EAS (starting TJ = 25°C, ID = IAV, VDD = 24V
3.9
-55 to 175
Value
1.36
100
275
Value
40
500
V/ns
°C
Unit
°C/W
°C/W
°C
Unit
A
mJ
3/15
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