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DFE10I600PM View Datasheet(PDF) - IXYS CORPORATION

Part Name
Description
Manufacturer
DFE10I600PM
IXYS
IXYS CORPORATION IXYS
DFE10I600PM Datasheet PDF : 2 Pages
1 2
FRED
Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
DFE 10 I 600PM
advanced
VRRM =
IFAV =
t rr =
600 V
10 A
35 ns
Part number (Marking on product)
DFE 10 I 600PM
3
1
Features / Advantages:
Planar passivated chips
Llow leakage current
Very short recovery time
Improved thermal behaviour
Low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Backside: isolated
Package:
TO-220ACFP
Industry standard outline
Plastic overmolded tab for
electrical isolation
Epoxy meets UL 94V-0
RoHS compliant
Symbol
VRRM
IR
VF
I FAV
VF0
rF
R thJC
TVJ
Ptot
I FSM
I RM
t rr
CJ
EAS
IAR
Definition
max. repetitive reverse voltage
Conditions
reverse current
forward voltage
VR =
VR =
IF =
IF =
600 V
600 V
10 A
20 A
average forward current
IF = 10 A
IF = 20 A
rectangular, d = 0.5
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 150 °C
TC = 100 °C
TVJ = 150 °C
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
tp = 10 ms (50 Hz), sine
IF = 10 A;
-diF /dt = 100 A/µs
VR = 300 V
VR = 300 V; f = 1 MHz
I AS = tbd A; L = 100 µH
VA = 1.5·VR typ.; f = 10 kHz
TC = 25 °C
TVJ = 45 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 25 °C
Ratings
min. typ. max.
600
20
1.5
1.50
1.80
1.30
1.70
10
0.98
28.7
4.20
-55
150
30
100
4
35
120
tbd
tbd
tbd
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
mJ
A
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified
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