AO4408 View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
AO4408 Datasheet PDF : 5 Pages
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AO4408
IS
Continuous Source Current1.5
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9
VG=VD=0V , Force Current
A
I SM
Pulsed Source Current2,5
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36
Trr
Qrr
Notes:
Body Diode Reverse Recovery Time
IF=8A ,
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8
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Ns
dI/dt=100A/µs , TJ=25℃
Body Diode Reverse Recovery Charge
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2.9
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Nc
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A
4.The power dissipation is limited by 150℃ junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Typical Characteristics：
36
VGS=10V
30
VGS=7V
24
VGS=5V
VGS=4.5V
18
VGS=3V
12
6
0
0
0.5
1
1.5
2
2.5
3
VDS , Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
12
10
8
6
TJ=150℃
TJ=25℃
4
2
0
0
0.3
0.6
0.9
1.2
VSD , Source-to-Drain Voltage (V)
SD
Fig.3 Forward Characteristics of Reverse
22
ID=8A
18
14
10
2
4
VG6S (V)
8
10
Fig.2 On-Resistance vs. G-S Voltage
10
VDS=15V
ID= 8
7.5
5
2.5
0
0
5
10
15
20
QG , T o t a l G a t e C h
Fig.4 Gate-Charge Characteristics
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