3N65L-TA3-T View Datasheet(PDF) - VBsemi Electronics Co.,Ltd
Part Name
Description
Manufacturer
3N65L-TA3-T Datasheet PDF : 9 Pages
| |||
3N65L-TA3-T
www.VBsemi.tw
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
-
+
RG
• dV/dt controlled by RG
+
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
- VDD
• D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform
Reverse
recovery
Body diode forward
current
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor crurent
Ripple ≤ 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
E-mail：China@VBsemi TEL:86-755-83251052
7
|
|
Share Link: 