L3705N View Datasheet(PDF) - VBsemi Electronics Co.,Ltd

Part Name

Description

Manufacturer

L3705N

N-Channel 60-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

L3705N

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

60

RDS(on) ()

0.011 at VGS = 10 V

0.012 at VGS = 4.5 V

ID (A)a

60

50

FEATURES

• 175 °C Junction Temperature

• TrenchFET® Power MOSFET

• Material categorization:

www.VBsemi.tw

TO-220AB

S

D

G

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

VGS

± 20

V

Continuous Drain Current (TJ = 175 °C)b

TC = 25 °C

TC = 100 °C

ID

60

50a

Pulsed Drain Current

IDM

200

A

Continuous Source Current (Diode Conduction)

IS

50a

Avalanche Current

IAS

50

Single Avalanche Energy (Duty Cycle  1 %)

L = 0.1 mH

EAS

125

mJ

Maximum Power Dissipation

TC = 25 °C

TA = 25 °C

PD

136

3b, 8.3b, c

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambienta

Maximum Junction-to-Case

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t  10 s.

t  10 sec

Steady State

Symbol

RthJA

RthJC

Typical

15

40

0.85

Maximum

18

50

1.1

Unit

°C/W

E-mail：China@VBsemi TEL:86-755-83251052

1

Share Link: