Description:
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features:
1) VDS=600V,ID=2A,RDS(ON)≤5Ω@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
CEU02N6G
D
G
S
Absolute Maximum Ratings:(TC=25℃ unless otherwise noted)
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current-TC=25℃
Continuous Drain Current-TC=100℃
Pulsed Drain Current
Single Pulse Avalanche Energy1
Power Dissipation(TC=25℃)
Operating and Storage Junction Temperature Range
Ratings
600
±30
2
1.5
---
120
44
-55 to +150
Thermal Characteristics:
Symbol
Parameter
Max
RƟJC
Thermal Resistance,Junction to Case
2.87
RƟJA Thermal Resistance,Junction to Ambient
110
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Units
V
V
A
mJ
W
℃
Units
℃/W