Qg
Total Gate Charge2,3
Qgs
Gate-Source Charge2,3
VGS=4.5V, VDS=15V,
ID=20A
Qgd
Gate-Drain “Miller” Charge2,3
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage3 VGS=0V,IS=1A,TJ=25℃
IS
Continuous Source Current
VG=VD=0V , Force
ISM
Pulsed Source Current
Current
Notes:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
Typical Characteristics: (TC=25℃ unless otherwise noted)
CEM 8809
---
11.1
22
nC
---
1.85
3.7
nC
---
6.8
13
nC
---
---
1
V
---
---
20
A
---
---
40
A
TC , Case Temperature (℃)
Fig.1 Continuous Drain Current vs. TC
TJ , Junction Temperature (℃)
Fig.2 Normalized RDSON vs. TJ
1
TJ , Junction Temperature (℃)
Fig.3 Normalized Vth vs. TJ
Qg , Gate Charge (nC)
Fig.4 Gate Charge Waveform
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