SW50N06A View Datasheet(PDF) - Xian Semipower Electronic Technology Co., Ltd.
Part Name
Description
Manufacturer
SW50N06A Datasheet PDF : 7 Pages
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SAMWIN
SW50N06A
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
103
V [ V ] Top 15
GS
10
8
7
102
6
5.5
5
Bottom 4.5
101
100
10-1
، طNote
1. 250§ ءPulse Test
2. T = 25،ة
C
100
101
V [V], Drain to Source Voltage
DS
Fig. 3. On-resistance variation vs.
drain current and gate voltage
102
25[،]ة
125[،]ة
101
-55[،]ة
، طNote
V = 30 [ V ]
DS
250§ ءPulse Test
100
2
4
6
8
10
Vgs[ v ], Gate-Source Voltage
Fig. 4. On state current vs.
diode forward voltage
70
60
50
40
30
V =10[V]
GS
20
V =20[V]
GS
10
، طNote
T = 25،ة
J
0
0
50
100
150
200
I [ A ], Drain Current
D
Fig. 5. Capacitance characteristics
(Non-Repetitive)
3000
2500
C
oss
2000
C
iss
1500
1. C = C + C (C = shorted)
iss
gs
gd ds
2. C = C + C
Oss
ds
gd
3. C = C
rss
gd
، طNote
1. V = 0[V]
GS
2. Frequency = 1[MHz]
1000
500
C
rss
0
10-1
100
101
V [ V ], Drain to Source Voltage
DS
102
101
100
0.2
Tj=175oC
Tj=25oC
، طNote
V = 0V
GS
250§ ءPulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Vsd[ V ], Source-Drain Voltage
Fig. 6. Gate charge characteristics
12
10
8
V = 30V
DS
V =12V
DS
V = 48V
DS
6
4
2
، طNote
I = 50A
D
0
0
5
10
15
20
25
30
35
40
45
Gate Charge [nC]
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