MTV16N50E View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
MTV16N50E Datasheet PDF : 10 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
TMOS E-FET.™
Power Field Effect Transistor
D3PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
®
speed switching applications in power supplies, converters, PWM
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
D
N–Channel
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete G
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
S
Order this document
by MTV16N50E/D
MTV16N50E
TMOS POWER FET
16 AMPERES
500 VOLTS
RDS(on) = 0.40 OHM
CASE 433–01, Style 2
D3PAK Surface Mount
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
VDSS
VDGR
VGS
ID
ID
IDM
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, Peak IL = 16 Apk, L = 6.7 mH, RG = 25 Ω )
PD
TJ, Tstg
EAS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
RθJC
RθJA
RθJA
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Value
500
500
±20
16
9.0
60
180
1.4
2.0
– 55 to 150
860
0.7
62.5
35
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
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