DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

S-8261 View Datasheet(PDF) - Unspecified

Part Name
Description
Manufacturer
S-8261 Datasheet PDF : 33 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8261 Series
Rev.5.4_03
(6) Test Condition 6, Test Circuit 3
(Internal Resistance between VM and VDD, Internal Resistance between VM and VSS)
The resistance between VM and VDD (RVMD) is the internal resistance between VM and VDD under the set
conditions of V1 1.8 V and V2 0 V.
The resistance between VM and VSS (RVMS) is the internal resistance between VM and VSS under the set
conditions of V1 3.5 V and V2 1.0 V.
(7) Test Condition 7, Test Circuit 4
(CO Pin Resistance “H”, CO Pin Resistance “L”)
The CO pin resistance “H” (RCOH) is the resistance the CO pin under the set condition of V1 3.5 V, V2 0 V and V3
3.0 V.
The CO pin resistance “L” (RCOL) is the resistance the CO pin under the set condition of V1 4.5 V, V2 0 V and V3
0.5 V.
(8) Test Condition 8, Test Circuit 4
(DO Pin Resistance “H”, DO Pin Resistance “L”)
The DO pin resistance “H” (RDOH) is the resistance the DO pin under the set condition of V1 3.5 V, V2 0 V and V4
3.0 V.
The DO pin resistance “L” (RDOL) is the resistance the DO pin under the set condition of V1 1.8 V, V2 0 V and V4
0.5 V.
(9) Test Condition 9, Test Circuit 5
(Overcharge Detection Delay Time, Overdischarge Detection Delay Time)
The overcharge detection delay time (tCU) is the time needed for VCO to change from “H” to “L” just after the voltage
V1 momentarily increases (within 10 s) from the overcharge detection voltage (VCU) 0.2 V to the overcharge
detection voltage (VCU) 0.2 V under the set condition of V2 0 V.
The overdischarge detection delay time (tDL) is the time needed for VDO to change from “H” to “L” just after the
voltage V1 momentarily decreases (within 10 s) from the overdischarge detection voltage (VDL) 0.2 V to the
overdischarge detection voltage (VDL) 0.2 V under the set condition of V2 0 V.
(10) Test Condition 10, Test Circuit 5
(Overcurrent 1 Detection Delay Time, Overcurrent 2 Detection Delay Time, Load Short-circuiting Detection
Delay Time, Abnormal Charge Current Detection Delay Time)
The overcurrent 1 detection delay time (tIOV1) is the time needed for VDO to go “L” after the voltage V2 momentarily
increases (within 10 s) from 0 V to 0.35 V under the set condition of V1 3.5 V and V20 V.
The overcurrent 2 detection delay time (tIOV2) is the time needed for VDO to go “L” after the voltage V2 momentarily
increases (within 10 s) from 0 V to 0.7 V under the set condition of V1 3.5 V and V2 0 V.
The load short-circuiting detection delay time (tSHORT) is the time needed for VDO to go “L” after the voltage V2
momentarily increases (within 10 s) from 0 V to 1.6 V under the set condition of V1 3.5 V and V2 0 V.
The abnormal charge current detection delay time is the time needed for VCO to go from “H” to “L” after the voltage
V2 momentarily decreases (within 10 s) from 0 V to 1.1 V under the set condition of V1 3.5 V and V2 0 V. The
abnormal charge current detection delay time has the same value as the overcharge detection delay time.
(11) Test Condition 11, Test Circuit 2 (0 V battery charge function)
(0 V Battery Charge Starting Charger Voltage)
The 0 V battery charge starting charger voltage (V0CHA) is defined as the voltage between VDD and VM at which VCO
goes “H” (VVM 0.1 V or higher) when the voltage V2 is gradually decreased from the starting condition of V1 V2
0 V.
(12) Test Condition 12, Test Circuit 2 (0 V battery charge inhibition function)
(0 V Battery Charge Inhibition Battery Voltage)
The 0 V battery charge inhibition battery voltage (V0INH) is defined as the voltage between VDD and VSS at which
VCO goes “H” (VVM 0.1 V or higher) when the voltage V1 is gradually increased from the starting condition of V1 0
V and V2  4 V.
16
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]