KTA1298
Silicon Epitaxial Planar Transistor
FEATURES
z High DC current gain:hFE=100-320.
z Low saturation voltage:VCE(sat)=-0.4V(Max)
(IC=-500mA,IB=-20mA).
z Suitable for driver stage of small motor.
z Complementary to KTC3265.
z Small package.
APPLICATIONS
z Low frequency power amplifier application.
z Power switching application.
ORDERING INFORMATION
Type No.
Marking
KTA1298
IO/IY
A
K
D
G
C
Package Code
SOT-23
E
B
J
H
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-35
VCEO
Collector-Emitter Voltage
-30
VEBO
Emitter-Base Voltage
-5
IC
Collector Current -Continuous
-800
PC
Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0
-35
V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-30V,IE=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
DC current gain
hFE(1)
VCE=-1V,IC=-100mA
100
hFE(2)
VCE=-1V,IC=-800mA
40
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-20mA
-0.1 μA
-0.1 μA
320
-0.4 V
Base-emitter voltage
VBE
VCE=-1V,IC=-10mA
-0.5
-0.8 V
Transition frequency
fT
VCE=-5V, IC=-10mA
120
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
13
pF
CLASSIFICATION OF hFE(1)
Rank
Range
O
100-200
Y
160-320
SOT-23
Dim
Min
Max
A
2.70
3.10
B
1.10
1.50
C
1.0 Typical
D
0.4 Typical
E
0.35
0.48
G
1.80
2.00
H
0.02
0.1
J
0.1 Typical
K
2.20
2.60
All Dimensions in mm
Revision:20170701-P1
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