2SJ327-Z-E1-AZ View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
2SJ327-Z-E1-AZ Datasheet PDF : 8 Pages
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2SJ327-Z-E1-AZ
www.VBsemi.tw
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 60 V, VGS = 0 V
VDS = - 60 V, VGS = 0 V, TJ = 125 °C
VDS = - 60 V, VGS = 0 V, TJ = 175 °C
VDS = - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 5 A
VGS = - 10 V, ID = - 5 A, TJ = 125 °C
VGS = - 10 V, ID = - 5 A, TJ = 175 °C
VGS = - 4.5 V, ID = - 2 A
VDS = - 15 V, ID = - 5 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 25 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = - 30 V, VGS = - 10 V, ID = - 8.4 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = - 30 V, RL = 3.57 Ω
ID ≅ - 8.4 A, VGEN = - 10 V, RG = 2.5 Ω
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics
Pulsed Current
ISM
(TC = 25 °C)b
Forward Voltageb
VSD
IF = - 2 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Time
trr
Qrr
IF = - 8 A, di/dt = 100 A/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Min
- 60
- 1.0
- 10
Typa
Max
- 2.0
- 3.0
± 100
-1
- 50
- 150
0.061
0.100
0.150
0.072
8
1000
120
100
10
2.1
3.2
8.0
6
15
16
8
- 0.9
50
80
- 50
- 1.3
Unit
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
E-mail：China@VBsemi TEL:86-755-83251052
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