2SJ327-Z-E1-AZ View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

2SJ327-Z-E1-AZ

P-Channel 60-V (D-S) MOSFET

Unspecified 

2SJ327-Z-E1-AZ

P-Channel 60-V (D-S) MOSFET

www.VBsemi.tw

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

- 60

0.061 at V GS = - 10 V

0.072 at VGS = - 4.5 V

ID (A)

- 30

- 26

Qg (Typ)

10

FEATURES

• TrenchFET® Power MOSFET

• 100 % UIS Tested

APPLICATIONS

• Load Switch

TO-252

S

G

GDS

Top View

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

VGS

± 20

V

Continuous Drain Current (TJ = 175 °C)

TC = 25 °C

TC = 100 °C

ID

- 30

- 25

Pulsed Drain Current

IDM

- 50

A

Continuing Source Current (Diode Conduction)

IS

- 20

Avalanche Current

IAS

- 20

Single Pulse Avalanche Energy

Maximum Power Dissipation

L = 0.1 mH

EAS

7.2

mJ

TC = 25 °C

TA = 25 °C

PD

34a

4b

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambientb

Junction-to-Case

Notes:

a. See SOA curve for voltage derating.

b. Surface Mounted on 1" x 1" FR-4 boad.

t ≤ 10 sec

Steady State

Symbol

RthJA

RthJC

Typical

20

62

5

Maximum

25

75

6

Unit

°C/W

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