DM-111A View Datasheet(PDF) - Sony Semiconductor
Part Name
Description
Manufacturer
DM-111A Datasheet PDF : 7 Pages
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Magneto-Resistance Element
Description
The DM-111A is a highly sensitive magnetic
resistance element, composed of an evaporated
ferromagnetic alloy on a silicon substrate. The
element can be used for detection of rotational
speed and for detection of angle of rotation and as a
detection of position.
Features
• Low power consumption
38µW (Typ.) at VCC=5V
• Low magnetic field and high sensitivity
75mVp-p (Typ.) at VCC=5V
and H=4000A/m
• High reliability
Ensured through silicon nitride protective filming
Absolute Maximum Ratings (Ta=25°C)
• Supply voltage
VCC
10
V
• Operating temperature Topr –40 to +80 °C
• Storage temperature
Tstg –50 to +100 °C
Recommended Operating Condition 5
V
DM-111A
M-102 (Plastic)
Electrical Characteristics
Item
Total resistance
Symbol
RT
Midpoint potential
VC
Output voltage
VO
Condition
H=4000A/m, θ=45°
VCC=5V , H=4000A/m
Revoiving magnetic field
VCC=5V , H=4000A/m
Revoiving magnetic field
Min.
500
2.47
30
Typ.
650
2.50
75
(Ta=25°C)
Max.
Unit
800
kΩ
2.53
V
mVp-p
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E94706A5X-TE
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