AH11-G View Datasheet(PDF) - TriQuint Semiconductor
Part Name
Description
Manufacturer
AH11-G Datasheet PDF : 7 Pages
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AH11
High Dynamic Range Dual Amplifier
Applications
Mobile Infrastructure
Defense / Homeland Security
Fixed Wireless
Product Features
150 – 3000 MHz
+44 dBm OIP3 (1900 MHz, balanced circuit)
Single-ended performance:
13.5 dB Gain
2.7 dB Noise Figure
+21 dBm P1dB
Single +5 Volt Supply
Lead-free / RoHS-compliant SOIC-8 package
SOIC-8 package
Functional Block Diagram
General Description
The AH11 is a high linearity amplifier for use in digital
communication systems. It combines low noise figure and
high intercept point into a low-cost SMT solution. This
device extends the linear efficiency advantages of
TriQuint’s AH1 to higher power levels by combining two
internally matched die. This dual-amplifier configuration
allows for the optimal design of balanced or push-pull
operation. The amplifier can also be used for single-ended
operation in each branch of a diversity receive system.
A mature and reliable GaAs MESFET technology is
employed to maximize linearity while achieving low noise
figure. The SOIC-8 package is lead-free /RoHS-compliant
package and is thermally enhanced to achieve an MTTF
greater than 100 years at a case temperature of 85C. All
devices are 100% RF and DC tested.
Pin Configuration
Pin No.
1
2, 3, 6, 7
4
5
8
Backside Paddle
Function
RF In (Amp 1)
RF/DC GND
RF In (Amp 2)
RF Out (Amp 2)
RF Out (Amp 1)
RF/DC GND
Data Sheet: Rev A 0 6/23/11
© 2011 TriQuint Semiconductor, Inc.
Ordering Information
Part No.
AH11-G
Description
High Dynamic Range Dual Amplifier
AH11BAL-PCB 0.6-2.1 GHz Balanced Eval Board
Standard T/R size = 500 pieces on a 7” reel.
- 1 of 7 -
Disclaimer: Subject to change without notice
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