2N3700CSM View Datasheet(PDF) - TT Electronics.
Part Name
Description
Manufacturer
2N3700CSM Datasheet PDF : 3 Pages
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SILICON NPN TRANSISTOR
2N3700CSM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
Collector-Emitter
Breakdown Voltage
IEBO
Emitter-Base Cut-Off Current
ICES
Collector-Emitter Cut-Off
Current
IC = 30mA
VEB = 7.0V
VEB = 5.0V
VCE = 90V
IB = 0
IC = 0
IC = 0
TA = 150°C
ICBO
Collector-Base Cut-Off Current VCB = 140V
IE = 0
IC = 0.10mA
VCE = 10V
IC = 10mA
VCE = 10V
hFE(1)
DC Current Gain
IC = 150mA
VCE = 10V
TA = -55°C
IC = 500mA
VCE = 10V
IC = 1.0A
VCE = 10V
VCE(sat)(1)
VBE(sat)(1)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IC = 150mA
IC = 500mA
IC = 150mA
IB = 15mA
IB = 50mA
IB = 15mA
DYNAMIC CHARACTERISTICS
|hfe|
Magnitude of Small-Signal
Short-Circuit Current Gain
hfe
Small-Signal Short-Circuit
Current Gain
Cobo
Output Capacitance
Cibo
Input Capacitance
IC = 50mA
f = 20MHz
IC = 1.0mA
f = 1.0KHz
VCB = 10V
f = 1.0MHz
VEB = 0.5V
f = 1.0MHz
VCE = 10V
VCE = 5.0V
IE = 0
IC = 0
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Min. Typ. Max. Unit
80
V
10
µA
10
nA
10
5
µA
10
50
90
100
300
40
50
15
0.2
0.5
V
1.1
4
5
20
80
400
12
pF
60
pF
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 5594
Issue 2
Page 2 of 3
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