DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

L9333DIE1 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
L9333DIE1
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L9333DIE1 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
L9333
ELECTRICAL CHARACTERISTCS (continued)
Symbol
Parameter
Test Condition
Outputs OUT1- OUT4
RDSon Output ON-resistor
VS > 6V, IO = 0.3A
IOLeak Leakage current
VO = VS = 14V; Ta < 125°C
VO = VS = 14V; Ta < 150°C
VOClamp Output voltage during clamping EFB 2mJ; 10 mA < IO < 0.3A
IOSC Short-circuit current
VS > 6V
CO internal output capacities
VO > 4.5V
Diagnostic Output DIAG
VDlow Output voltage LOW
IDL = 0.6mA
IDmax Max. output current
internal current limitation; VD =
14V
IDLeak Leakage current
VD = VS = 14 V; Ta < 125 °C
VD = VS = 14 V; Ta < 150 °C
Timing Characteristics 4)
td,on On delay time
VS = 14V
td,off Off delay time
Cext = 0F; Lext = 0H
tset Enable settling time
only testing condition
td,DIAG ON or OFF Diagnostic delay time 10mA I0 200mA
Sout Output voltage slopes
Note : All parameters are measured at 125°C.
Note 4) : See also Fig.3 Timing Characteristics
Min. Typ. Max. Unit
1.7
3.8
1
5
µA
25
µA
45
52
60
V
400 700 1000 mA
100
pF
0.8
V
1
5
15
mA
0.1
1
µA
5
µA
2
3.5
µs
3
4.5
µs
20
µs
10
µs
2.5
9
16 V/µs
5/13
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]