NE72218 View Datasheet(PDF) - California Eastern Laboratories.
Part Name
Description
Manufacturer
NE72218 Datasheet PDF : 5 Pages
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C TO X BAND N-CHANNEL GaAs MESFET NE72218
FEATURES
• HIGH POWER GAIN:
Gs = 5.0 dB TYP at f = 12 GHz
• LOW PHASE NOISE:
-110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz
• GATE LENGTH: LG = 0.8 µm (recessed gate)
• GATE WIDTH: WG = 400 µm
• 4 PIN SUPER MINI MOLD: (SOT-343)
• TAPE & REEL PACKAGING
DESCRIPTION
The NE72218 is a low cost GaAs MESFET suitable for both
amplifier and oscillator applications through X-band. The
device features a 0.8 micron recessed gate, triple epitaxial
technology and is fabricated using ion implantation for im-
proved RF and DC performance, reliability and uniformity. The
NE72218 is housed in a 4 pin super mini mold package, making
it ideal for high density design.
NEC's stringent quality assurance and test procedures ensure
the highest reliability performance.
PACKAGE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 18
2.1 ± 0.2
1.25 ± 0.1
0.3+-00..1005
2.0 ± 0.2 0.65
2
1.25
0.60
1
0.4+-00..1005
0.3
3 0.65
1.3
0.65
4
0.9 ± 0.1
PIN CONNECTIONS
1. Source
2. Gate
3. Source
4. Drain
0 to 0.1
+0.10
0.15 -0.05
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
Gs
Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz
dB
P1dB
Output Power at 1 dB Gain Compression Point at
VDS = 3 V, ID = 30 mA, f = 12 GHz
dBm
PN
Phase Noise at VDS = 3 V, ID = 30 mA, f = 11 GHz, 100 KHz offset dBc/Hz
Phase Noise at VDS = 3 V, ID = 30 mA, f = 11 GHz, 10 KHz offset dBc/Hz
gm
Transconductance at VDS = 3 V, ID = 30 mA
mS
20
IDSS
Saturated Drain Current at VDS = 3 V, VGS = 0 V
mA
30
VGS (OFF) Gate to Source Cut Off Voltage at VDS = 3 V, ID = 100 µA
V
-0.5
IGSO
Gate to Source Leakage Current at VGS = -5 V
µA
NE72218
18
TYP
5.0
15.0
-110
-90
45
60
-2.0
1.0
MAX
120
-4.0
10
California Eastern Laboratories
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