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DM-231 View Datasheet(PDF) - Sony Semiconductor

Part Name
Description
Manufacturer
DM-231
Sony
Sony Semiconductor Sony
DM-231 Datasheet PDF : 5 Pages
1 2 3 4 5
DM-231
Midpoint potential vs. Magnetic field Intensi ty (1)
2.54
2.52
2.50
H
VA
VCC
231
GND
VCC=5V
2.48
2.46
0
H
VA
231
GND
VCC
4000 8000 12000 16000
H-Magnetic field intensity (Oe)
Midpoint potential vs. Magnetic field Intensity (2)
2.54
2.52
2.50
H
VCC
231 GND
VB
VCC=5V
2.48
2.46
0
H
231 GND
VCC
VB
4000 8000 12000 16000
H-Magnetic field intensity (Oe)
Midpoint potential vs. Magnetic field direction
2.54
2.52
2.50
2.48
VA
θH
VA
231
VCC
GND
VB
VCC=5V
H=14400A/m
VB
2.46
–90 –45
0
45
90
θ-Magnetic field direction (deg)
Output voltage vs. Magnetic field intensity
200
150
100
H
VA
231 GND
VCC
VB
50
H: Peak intensity of AC magnetic field
VCC=5V
0
4000 8000 12000 16000
H-Magnetic field intensity (Oe)
Temperature characteristics
800
200
RT
700
150
600
VO
100
50
—20
500
H=14400A/m
AC Magnetic field
VCC=5V
400
0
20
40
60
80
Ta-Ambient temperature (°C)
—4—
 

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