DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

1.5KE7.5 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
1.5KE7.5
VISHAYSEMICONDUCTOR
Vishay Semiconductors VISHAYSEMICONDUCTOR
1.5KE7.5 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
RθJA
RθJL
VALUE
75
15.4
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
1.5KE6.8A-E3/54
0.968
54
1.5KE6.8AHE3/54 (1)
0.968
54
Note:
(1) Automotive grade AEC-Q101 qualified
BASE QUANTITY
1400
1400
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
10
1
0.1
0.1 µs
1.0 µs 10 µs 100 µs 1.0 ms
td - Pulse Width (s)
10 ms
Figure 1. Peak Pulse Power Rating Curve
150
tr = 10 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
Peak Value
where the Peak Current
100
IPPM
decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Figure 3. Pulse Waveform
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
10 000
1000
Uni-Directional
Bi-Directional
VR = 0
VR = Rated
100
Stand-Off Voltage
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
5
10
100
500
VBR - Breakdown Voltage (V)
Figure 4. Typical Junction Capacitance
www.vishay.com
4
For technical questions within your region, please contact one of the following: Document Number: 88301
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 22-Oct-08
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]