CM600DY-24A(2004) View Datasheet(PDF) - MITSUBISHI ELECTRIC

Part Name

Description

Manufacturer

CM600DY-24A
(Rev.:2004)

MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI ELECTRIC  

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)

Symbol

VCES

VGES

IC

ICM

IE (Note 1)

IEM (Note 1)

PC (Note 3)

Tj

Tstg

Viso

—

—

—

Parameter

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Torque strength

Weight

G-E Short

C-E Short

DC, TC = 78°C*1

Pulse

Pulse

TC = 25°C*1

Conditions

Main terminal to base plate, AC 1 min.

Main terminal M6

Mounting holes M6

Typical value

MITSUBISHI IGBT MODULES

CM600DY-24A

HIGH POWER SWITCHING USE

(Note 2)

(Note 2)

Ratings

1200

±20

600

1200

600

1200

3670

–40 ~ +150

–40 ~ +125

2500

3.5 ~ 4.5

3.5 ~ 4.5

580

Unit

V

V

A

A

W

°C

°C

V

N•m

g

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

Parameter

Test conditions

ICES

VGE(th)

IGES

VCE(sat)

Cies

Coes

Cres

QG

td(on)

tr

td(off)

tf

trr (Note 1)

Qrr (Note 1)

VEC(Note 1)

Rth(j-c)Q

Rth(j-c)R

Rth(c-f)

RG

Collector cutoff current

Gate-emitter threshold

voltage

Gate leakage current

Collector-emitter saturation

voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Reverse recovery time

Reverse recovery charge

Emitter-collector voltage

Thermal resistance

Contact thermal resistance

External gate resistance

VCE = VCES, VGE = 0V

IC = 60mA, VCE = 10V

VGE = VGES, VCE = 0V

Tj = 25°C

Tj = 125°C

IC = 600A, VGE = 15V

VCE = 10V

VGE = 0V

VCC = 600V, IC = 600A, VGE = 15V

VCC = 600V, IC = 600A

VGE1 = VGE2 = 15V

RG = 0.52Ω, Inductive load switching operation

IE = 600A

IE = 600A, VGE = 0V

IGBT part (1/2 module)*1

FWDi part (1/2 module)*1

Case to fin, Thermal compound Applied (1/2 module)*2

Min.

—

6

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

0.52

*1 : Tc, Tf measured point is just under the chips.

*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

Limits

Typ.

—

7

—

2.1

2.4

—

—

—

2700

—

—

—

—

—

19

—

—

—

0.018

—

Max. Unit

1

mA

8

0.5

3.0

—

94

8

1.8

—

660

190

700

350

250

—

3.8

0.034

0.062

—

7.8

V

µA

V

nF

nC

ns

ns

µC

V

°C/W

Ω

CM600DY-24A

Page 2

Mar. 2004

04.2.19, 9:21 PM Adobe PageMaker 6.5J/PPC

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