IXTH11N80 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
IXTH11N80 Datasheet PDF : 4 Pages
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IXTH 11N80 IXTH 13N80
IXTM 11N80 IXTM 13N80
Symbol
g
fs
C
iss
Coss
Crss
td(on)
t
r
td(off)
tf
Qg(on)
Qgs
Q
gd
RthJC
RthCK
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V = 10 V; I = 0.5 • I , pulse test
8 14
S
DS
D
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz
4500
pF
310
pF
65
pF
V = 10 V, V = 0.5 • V , I = 0.5 I
GS
DS
DSS D
D25
RG = 2 Ω, (External)
20 50 ns
33 50 ns
63 100 ns
32 50 ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
145 170 nC
30 45 nC
55 80 nC
0.42 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
11N80
13N80
11 A
13 A
ISM
Repetitive;
11N80
pulse width limited by T 13N80
JM
44 A
52 A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5 V
t
rr
I
F
=
I,
S
-di/dt
=
100
A/µs,
V
R
=
100
V
800
ns
TO-247 AD (IXTH) Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A
2.2 2.54
1
A2
2.2 2.6
b
1.0 1.4
b 1.65 2.13
1
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-204AA (IXTM) Outline
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Pins
1 - Gate
2 - Source
Case - Drain
Dim. Millimeter
Min. Max.
A
6.4 11.4
A1
3.42
∅b .97 1.09
∅D
22.22
e 10.67 11.17
e1 5.21 5.71
L 7.93
∅p 3.84 4.19
∅p1 3.84 4.19
q
30.15 BSC
R
13.33
R1
4.77
s 16.64 17.14
Inches
Min. Max.
.250 .450
.135
.038 .043
.875
.420 .440
.205 .225
.312
.151 .165
.151 .165
1.187 BSC
.525
.188
.655 .675
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