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KSE703 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
KSE703
Fairchild
Fairchild Semiconductor Fairchild
KSE703 Datasheet PDF : 4 Pages
1 2 3 4
KSE700/701/702/703
Monolithic Construction With Built-in Base-
Emitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC
• Complement to KSE800/801/802/803
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Sym-
bol
Parameter
Value
Unit
s
VCBO Collector- Base Voltage : KSE700/701
- 60
V
: KSE702/703
- 80
V
VCEO Collector-Emitter Voltage : KSE700/701
- 60
V
: KSE702/703
- 80
V
VEBO
IC
IB
PC
TJ
TSTG
Emitter- Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
-5
V
-4
A
- 0.1
A
40
W
150
°C
- 55 ~ 150
°C
Equivalent Circuit
C
B
R1
R1 10k
R2 0.6k
R2
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage
: KSE700/701
: KSE702/703
IC = - 10mA, IB = 0
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
Collector Cut-off Current
: KSE700/701
: KSE702/703
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: KSE700/702
: KSE701/703
: ALL DEVICES
Collector-Emitter Saturation Voltage
: KSE700/702
: KSE701/703
: ALL DEVICES
Base-Emitter On Voltage
: KSE700/702
: KSE701/703
: ALL DEVICES
VCE = - 60V, IB = 0
VCE = - 80V, IB = 0
VCB = Rated BVCEO, IE = 0
VCB = Rated BVCEO, IE = 0
@TC = 100°C
VBE = - 5V, IC = 0
VCE = - 3V, IC = - 1.5A
VCE = - 3V, IC = - 2A
VCE = - 3V, IC = - 4A
IC = - 1.5A, IB = - 30mA
IC = - 2A, IB = - 40mA
IC = - 4A, IB = - 40mA
VCE = - 3V, IC = - 1.5A
VCE = - 3V, IC = - 2A
VCE = - 3V, IC = - 4A
Min. Max. Units
-60
V
-80
V
-100 µA
-100 µA
-100 µA
-500 µA
-2 mA
750
750
100
-2.5
V
-2.8
V
-3
V
-1.2
V
-2.5
V
-3
V
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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