2N5732 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2N5732 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 200mA ; IB= 0
VcE(sat)-"! Collector-Emitter Saturation Voltage lc= 10A; IB= 1A
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 20A; IB= 4A
VeE(sat) Base-Emitter Saturation Voltage
IC=10A;IB=1A
ICEO
Collector Cutoff Current
VCE= 80V; IB= 0
ICBO
Collector Cutoff Current
VCB=100V; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; I0= 0
hpE-1
DC Current Gain
lc= 5A ; VCE= 2V
hFE-2
DC Current Gain
lc= 20A ; VCe= 4V
fj
Current-Gain—Bandwidth Product lc=1A;VCE=10V
2N5732
MIN MAX UNIT
80
V
1.2
V
4.0
V
1.5
V
1.0
mA
0.1
mA
0.1
mA
30
300
5
30
MHz
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