D1026 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
Manufacturer
D1026 Datasheet PDF : 1 Pages
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Product Specification
2SD1026
Silicon NPN Transistors
www.jmnic.com
Features
﹒With TO-247 package
﹒Darlington transistor
Absolute Maximum Ratings Tc=25℃
SYMBOL
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
RATING
100
100
7
1
15
100
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Electrical Characteristics Tc=25℃
SYMBOL
ICBO
ICEO
IEBO
VCBO
VCEO
VEBO
VCE(sat-1)
VCE(sat-2)
hFE-1
hFE-2
VBE(sat-1)
VBE(sat-2)
fT
PARAMETER
Collector cut-off current
Collector breakdown voltage
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Base-emitter saturation voltages
Base-emitter saturation voltages
Transition frepuency at f=1MHz
CONDITIONS
VCB=100V; IE=0
VCE=100V; IB=0
VEB=7V; IC=0
IC=30mA; IB=0
IC=10A; IB=20mA
IC=10A; VCE=3V
IC=10A; IB=20mA
IC=1.5A; VCE=10V
BCE
TO-247
MIN TYP MAX UNIT
0.1
mA
0.1
mA
5
mA
100
V
1.5
V
1500
30000
2.0
V
20
MHz
JMnic
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