MMZ09312BT1 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
MMZ09312BT1 Datasheet PDF : 28 Pages
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TYPICAL CHARACTERISTICS — UMTS/LTE, 900 MHz, 5.0 V
36
50
34
45
32
Gain
40
30 VCC1 = VCC2 = VBIAS = 5 Vdc
35
28 f = 900 MHz, W--CDMA
30
26
25
24
20
22
15
20
10
PAE
18
5
16
0
11 13 15 17 19 21 23 25 27
Pout, OUTPUT POWER (dBm)
Figure 17. Power Gain and Power Added
Efficiency versus Output Power
--30
--35 VCC1 = VCC2 = VBIAS = 5 Vdc
f = 900 MHz
--40
2
1.75 VCC1 = VCC2 = VBIAS = 5 Vdc
f = 900 MHz
1.5
1.25
--45
1
--50
LTE 10 MHz
W--CDMA
--55
0.75
LTE 10 MHz
W--CDMA
0.5
0.25
--60
6
8 10 12 14 16 18 20 22
Pout, OUTPUT POWER (dBm)
Figure 18. ACPR versus Output Power
0
0
5
10
15
20
25
Pout, OUTPUT POWER (dBm)
Figure 19. Power Detector Output versus
Output Power
OPERATING CONDITIONS FOR FIGURES 17--19
W- CDMA
Single--Carrier W--CDMA 3GPP TM1
CF = 9.31 dB, Channel Bandwidth = 3.84 MHz
Adjacent Channel Bandwidth = 3.84 MHz
Channel Offset = 5 MHz
LTE 10 MHz
LTE 10 MHz 3GPP TM1.1
CF = 11.70 dB, Channel Bandwidth = 9 MHz
Adjacent Channel Bandwidth = 9 MHz
Channel Offset = 10 MHz
MMZ09312BT1
10
RF Device Data
Freescale Semiconductor, Inc.
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