INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
BUZ71
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 9A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=50V; VGS=0
VSD
Forward On-Voltage
IS= 28A; VGS=0
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
MIN MAX UNIT
50
V
2.1
4
V
0.1
Ω
±100 nA
250
uA
1.8
V
650
pF
450
pF
280
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
VDD=30V,ID=3A
VGS=10V
RGS=50Ω
Tf
Fall Time
MIN
TYP
MAX UNIT
30
ns
85
ns
90
ns
110
ns
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn