P30-65nm SBC
Table 21: DC Current Characteristics (Sheet 2 of 2)
Sym
Parameter
CMOS
Inputs
(VCCQ =
1.7V - 3.6V)
TTL Inputs
(VCCQ =
2.4V - 3.6V) Unit
Test Conditions
Notes
Typ Max Typ Max
IPPBC VPP Blank Check
0.05 0.10 0.05 0.10
VPP = VPPL, erase in progress
mA
3
5
10
5
10
VPP = VPPH, erase in progress
Notes:
1.
All currents are RMS unless noted. Typical values at typical VCC, TC = +25°C.
2.
ICCS is the average current measured over any 5ms time interval 5µs after CE# is deasserted.
3.
Sampled, not 100% tested.
4.
ICCES is specified with the device deselected. If device is read while in erase suspend, current is ICCES plus ICCR.
5.
CIChCWa,rIaCcCEtemreisatsiucrseâ€d
over typical or max
on page 58.
times
specified
in
Section
15.5,
“Program
and
Erase
6.
if VIN > VCC the input load current increases to 10µA max.
7.
the IPPS,IPPWS,IPPES Will increase to 200µA when VPP/WP# is at VPPH.
14.2
DC Voltage Characteristics
Table 22: DC Voltage Characteristics
Sym
Parameter
CMOS Inputs
(VCCQ = 1.7V – 3.6V)
Min
Max
TTL Inputs (1)
(VCCQ = 2.4V – 3.6V)
Min
Max
Unit
Test Conditions
Notes
VIL
Input Low Voltage
-0.5
0.4
-0.5
0.6
V
-
2
VIH
Input High Voltage VCCQ – 0.4 VCCQ + 0.5
2.0
VCCQ + 0.5 V
-
VOL
Output Low Voltage
-
VCC = VCC Min
0.2
-
0.2
V VCCQ = VCCQ Min
-
IOL = 100µA
VOH Output High Voltage VCCQ – 0.2
-
VCCQ – 0.2
-
VCC = VCC Min
V VCCQ = VCCQ Min
-
IOH = –100µA
VPPLK VPP Lock-Out Voltage
-
0.4
-
0.4
V
-
3
VLKO
VCC Lock Voltage
1.0
-
1.0
-
V
-
-
VLKOQ VCCQ Lock Voltage
0.9
-
0.9
-
V
-
-
Notes:
1.
Synchronous read mode is not supported with TTL inputs.
2.
VIL can undershoot to –0.4V and VIH can overshoot to VCCQ + 0.4V for durations of 20ns or less.
3.
VPP ≤ VPPLK inhibits erase and program operations. Do not use VPPL and VPPH outside their valid ranges.
Datasheet
47
Apr 2010
Order Number:208033-02