RD28F1602C3B110_03 View Datasheet(PDF) - Intel

Part Name

Description

Manufacturer

RD28F1602C3B110_03

3 Volt Intel® Advanced+ Boot Block Flash Memory(C3) Stacked-Chip Scale Package Family

Intel 

3 Volt Intel® Advanced+ Boot Block Flash Memory Stacked-CSP Family

5.11

SRAM Data Retention Characteristics—Extended

Temperature

Table 19. SRAM Data Retention Characteristics(1)—Extended Temperature

Sym

Parameter

Note

Min

Typ

Max

Unit

Test Conditions

VDR

S-VCC for Data Retention

Deep Retention Current -

8-Mbit

1.5

–

3.3

V

CS1# ≥ VCC – 0.2 V

–

–

6

µA

IDR

Deep Retention Current -

2

4-Mbit

–

–

5

µA

S-VCC = 1.5 V

CS1# ≥ VCC – 0.2 V

Deep Retention Current -

2-Mbit

–

–

4

µA

tSDR

Data Retention Set-up Time

0

–

–

ns See Data Retention Waveform

tRDR

Recovery Time

tRC

–

–

ns

NOTES:

1. Typical values at nominal S-VCC, TCASE = +25 °C.

2. S-CS1# ≥VCC – 0.2 V, S-CS2 ≥VCC – 0.2 V (S-CS1# controlled) or S-CS2 ≤ 0.2 V (S-CS2 controlled).

Figure 11. SRAM Data Retention Waveform

CS1# Controlled tSDR

VCC

3.0/2.7V

CS1# (E1) 2.2V

VDR

GND

CS2 Controlled tSDR

VCC

3.0/2.7V

CS2 (E2)

VDR

0.4V

GND

Data Retention Mode

tRDR

Data Retention Mode

tRDR

Datasheet

39

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