RD28F1602C3B110_03 View Datasheet(PDF) - Intel
Part Name
Description
Manufacturer
RD28F1602C3B110_03
Intel
RD28F1602C3B110_03 Datasheet PDF : 70 Pages
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3 Volt Intel® Advanced+ Boot Block Flash Memory Stacked-CSP Family
Flash Test Configuration Component Values Table
Test Configuration
2.7 V–3.3 V Standard Test
CL (pF)
50
5.5
Flash AC Characteristics.
Table 13. Flash AC Characteristics—Read Operations
Density
16-Mbit
32-Mbit
# Sym
Parameter
Product
-70
Voltage Range
-90
-110
-70
2.7 V - 3.3 V
-90
Unit
Note Min Max Min Max Min Max Min Max Min Max
R1 tAVAV Read Cycle Time
R2 tAVQV Address to Output Delay
R3 tELQV F-CE# to Output Delay
R4 tGLQV F-OE# to Output Delay
R5 tPHQV F-RP# to Output Delay
R6 tELQX F-CE# to Output in Low Z
R7 tGLQX F-OE# to Output in Low Z
R8 tEHQZ F-CE# to Output in High Z
R9 tGHQZ F-OE# to Output in High Z
R10 tOH
Output Hold from Address
F-CE#, or F-OE# Change,
Whichever Occurs First
70
90
110
70
90
ns
70
90
110
70
90 ns
1
70
90
110
70
90 ns
1
20
30
30
20
20 ns
150
150
150
150
150 ns
2
0
0
0
0
0
ns
2
0
0
0
0
0
ns
2
20
25
25
20
20 ns
2
20
20
20
20
20 ns
2
0
0
0
0
0
ns
NOTES:
1. F-OE# may be delayed up to tELQV–tGLQV after the falling edge of CE# without impact on tELQV
2. Sampled, but not 100% tested.
3. See Figure 6, “AC Waveform: Flash Read Operations” on page 30.
4. See Figure 4, “Input/Output Reference Waveform” on page 28 for timing measurements and maximum allowable input slew
rate.
Datasheet
29
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