2SA1577 View Datasheet(PDF) - Secos Corporation.
Part Name
Description
Manufacturer
2SA1577 Datasheet PDF : 3 Pages
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Elektronische Bauelemente
2SA1577
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
3
1
2
A
L
3
Top View
1
2
V
G
BS
FEAT URES
D
Power dissipation
PCM : 200
Collector current
mW Temp.=25
ICM
: -500
Collector-base voltage
V(BR)CBO : -40
mA
V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
C
H
K
COLLECTOR
3
1
BASE
2
EMITTER
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
J
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
ELECTRICAL CHARACTERISTICS Tamb=25 oC unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic=-100µ A,IE=0
-40
Collector-emitter breakdown voltage
V(BR)CEO Ic=-1 mA,IB=0
-32
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA,IC=0
-5
Collector cut-off current
ICBO
VCB=-20 V,IE=0
Emitter cut-off current
IEBO
VEB=-4 V,IC=0
DC current gain
hFE(1) VCE=-3 V,IC=-10 mA
82
Collector-emitter saturation voltage
VCE(sat) IC=-100mA,IB=-10 mA
Transition frequency
fT
VCE=-5 V,IC=-20mA,f=100MHz
Collector output capacitance
Cob
VCB=-10 V,IE=0,f=1MHz
TYP MAX UNIT
V
V
V
-1
µA
-1
µA
390
-0.4
V
200
MHz
7
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
P
82-180
HP
Q
120-270
HQ
R
180-390
HR
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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