5962D0153301TXC View Datasheet(PDF) - Aeroflex Corporation

Part Name

Description

Manufacturer

5962D0153301TXC

16Megabit SRAM MCM

Aeroflex Corporation 

VDD

En

DATA RETENTION MODE

50%

tEFR

VDR > 2.0V

50%

tR

Figure 7. Low VDD Data Retention Waveform

DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(1 Second Data Rentention Test)

SYMBOL

PARAMETER

VDR

VDD for data retention

IDDR 1,2

Data retention current (per byte)

tEFR 1,3

Chip select to data retention time

tR1 ,3

Operation recovery time

Notes:

1. En = VDD - .2V, all other inputs = V DR or VSS.

2. Data retention current (ID D R) Tc = 25oC.

3. Not guaranteed or tested.

4. VDR = T=-40 oC and 125 oC.

DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(10 Second Data Retention Test, TC=-40oC and +125oC)

SYMBOL

PARAMETER

V

D

1

D

VDD for data retention

tEFR2, 3

Chip select to data retention time

tR2, 3

Operation recovery time

Notes:

1. Performed at VDD (min) and VDD (max).

2. En = VSS, all other inputs = V DR or V SS.

3. Not guaranteed or tested.

MINIMUM

2.0

--

0

tAVAV

MAXIMUM UNIT

--

V

2.0

mA

ns

ns

MINIMUM

3.0

0

tAVAV

MAXIMUM UNIT

3.6

V

ns

ns

11

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