MTV6N100E-RL View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MTV6N100E-RL

TMOS POWER FET 6.0 AMPERES, 1000 VOLTS RDS(on) = 1.5 Ω

ON Semiconductor 

MTV6N100E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 μAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 1000 Vdc, VGS = 0 Vdc)

(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 μAdc)

Threshold Temperature Coefficient (Negative)

Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 3.0 Adc)

Drain−to−Source On−Voltage

(VGS = 10 Vdc, ID = 6.0 Adc)

(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C)

Forward Transconductance (VDS = 10 Vdc, ID = 3.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

(VDD = 500 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 400 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 6.0 Adc, VGS = 0 Vdc)

(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)

Reverse Recovery Time

(IS = 6.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/μs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

trr

ta

tb

QRR

LD

LS

Min

Typ

Max

Unit

1000

—

—

—

—

—

1270

—

—

—

Vdc

—

—

mV/°C

μAdc

10

100

100

nAdc

Vdc

2.0

3.0

4.0

—

7.0

—

mV/°C

—

1.28

1.5

Ohm

Vdc

—

7.9

14.4

—

—

9.5

4.0

7.2

—

mhos

—

3000

4210

pF

—

219

440

—

43

90

—

27

45

ns

—

29

65

—

93

170

—

43

95

—

66

100

nC

—

12.5

—

—

25.9

—

—

26

—

Vdc

—

0.81

1.0

—

0.64

—

—

735

—

ns

—

188

—

—

547

—

—

4.7

—

μC

nH

—

4.5

—

nH

—

13

—

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