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MTV6N100E View Datasheet(PDF) - ON Semiconductor

Part Name
Description
Manufacturer
MTV6N100E Datasheet PDF : 0 Pages
MTV6N100E
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MΩ)
GatetoSource Voltage — Continuous
GatetoSource Voltage — NonRepetitive (tp 10 ms)
VDSS
1000
Vdc
VDGR
1000
Vdc
VGS
±20
Vdc
VGSM
±40
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp 10 μs)
ID
6.0
Adc
ID
4.2
IDM
18
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TC = 25°C (1)
PD
178
Watts
1.43
W/°C
2.0
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 6.0 Apk, L = 27.77 mH, RG = 25 Ω )
EAS
mJ
720
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
RθJC
RθJA
RθJA
0.70
°C/W
62.5
35
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
TL
260
°C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
http://onsemi.com
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