PUML1 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PUML1
NXP Semiconductors.
PUML1 Datasheet PDF : 12 Pages
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NXP Semiconductors
PUML1/DG
50 V, 200 mA NPN general-purpose transistor/100 mA NPN RET
500
hFE
(1)
400
300
(2)
200
(3)
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0.1
IC
(A)
0.08
0.06
0.04
IB (mA) = 0.56
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0.50
0.44
0.38
0.32
0.26
0.20
0.14
0.08
100
0.02
0
10−1
1
10
102
103
IC (mA)
0.02
0
0
2
4
6
8
10
VCE (V)
VCE = 10 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. TR1: DC current gain as a function of collector
current; typical values
Tamb = 25 °C
Fig 4. TR1: Collector current as a function of
collector-emitter voltage; typical values
1.3
VBEsat
(V)
0.9
(1)
(2)
(3)
0.5
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1
VCEsat
(V)
10−1
(1)
(2)
(3)
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0.1
10−1
1
10
102
103
IC (mA)
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 5. TR1: Base-emitter saturation voltage as a
function of collector current; typical values
10−2
10−1
1
10
102
103
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 6. TR1: Collector-emitter saturation voltage as a
function of collector current; typical values
PUML1_DG_1
Product data sheet
Rev. 01 — 14 July 2008
© NXP B.V. 2008. All rights reserved.
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