DF68543 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
DF68543 Datasheet PDF : 8 Pages
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DF685
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I2t
I2t for fusing
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
I
Surge (non-repetitive) forward current
FSM
I2t
I2t for fusing
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R
th(j-c)
Thermal resistance - junction to case
R
Thermal resistance - case to heatsink
th(c-h)
Tvj
Virtual junction temperature
T
Storage temperature range
stg
-
Clamping force
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRRM
Peak reverse current
trr
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
Reverse recovery current
RM
K
Soft factor
V
TO
rT
V
FRM
2/8
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
10ms half sine; with 0% VRRM, Tj = 150oC
10ms half sine; with 50% VRRM, Tj = 150oC
10ms half sine; with 100% VRRM, Tj = 150oC
Max. Units
4.5
kA
101.25x103 A2s
3.6
kA
64.8x103 A2s
-
kA
-
A2s
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 10kN
with mounting compound
Double side
Single side
On-state (conducting)
Min. Max. Units
- 0.045 oC/W
-
0.086 oC/W
- 0.095 oC/W
-
0.01 oC/W
-
0.02 oC/W
-
150
oC
-55 150
oC
9.0 11.0 kN
Conditions
At 1500A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
I
F
=
1000A,
di /dt
RR
=
100A/µs
T = 150oC, V = 100V
case
R
At Tvj = 150oC
At Tvj = 150oC
di/dt
=
1000A/µs,
T
j
=
125oC
Typ. Max. Units
-
4.8
V
-
80 mA
5
-
µs
-
650 µC
270
-
A
1.8
-
-
-
2.0
V
-
1.76 mΩ
-
220
V
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