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KTB988O View Datasheet(PDF) - KEC

Part Name
Description
Manufacturer
KTB988O Datasheet PDF : 2 Pages
1 2
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector Saturation Voltage
: VCE(sat)=-1.0V(Max.) at IC=-3A, IB=-0.3A.
Collector Power Dissipation
: PC=30W (Tc=25).
Complementary to KTD1351.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
VCBO
VCEO
VEBO
IC
IB
Collector Power
Dissipation
Ta=25
PC
Tc=25
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
-60
-60
-7
-3
-0.5
2.0
30
150
-55150
UNIT
V
V
V
A
A
W
KTB988
EPITAXIAL PLANAR PNP TRANSISTOR
A
R
S
D
T
L
C
C
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
Φ3.60 +_ 0.20
3.00
6.70 MAX
13.60+_ 0.50
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
9.50+_ 0.20
8.00+_ 0.20
2.90 MAX
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
Cob
TEST CONDITION
VCB=-60V, IE=0
VEB=-7V, IC=0
IC=-50mA, IB=0
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-3A
IC=-3A, IB=-0.3A
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
Turn-on Time
ton
Switching Time
Storage Time
tstg
I B2
0
IB1
INPUT IB1
IB2
20µsec
Fall Time
tf
-IB1=IB2=0.2A
DUTY CYCLE <= 1%
Note : hFE(1) Classification O:60120 , Y:100200 , GR:150300
OUTPUT
15
VCC =-30V
MIN.
-
-
-60
60
20
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-0.5
-0.7
9
150
MAX.
-100
-100
-
300
-
-1.0
-1.0
-
-
UNIT
A
A
V
V
V
MHz
pF
0.4
-
1.7
-
S
0.5
-
1996. 12. 18
Revision No : 1
1/2
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