5962F0151701VYA View Datasheet(PDF) - Aeroflex Corporation

Part Name

Description

Manufacturer

5962F0151701VYA

Radiation-Hardened 32K x 8 PROM

Aeroflex Corporation 

Standard Products

UT28F256LV Radiation-Hardened 32K x 8 PROM

Data Sheet

December, 2002

FEATURES

q Programmable, read-only, asynchronous, radiation-

hardened, 32K x 8 memory

- Supported by industry standard programmer

q 65ns maximum address access time (-55 oC to

+125 oC)

q Three-state data bus

q Low operating and standby current

- Operating: 50.0mA maximum @15.4MHz

• Derating: 1.5mA/MHz

- Standby: 1.0mA maximum (post-rad)

q Radiation-hardened process and design; total dose

irradiation testing to MIL-STD-883, Method 1019

- Total dose: 1E6 rad(Si)

- LETTH(0.25) ~ 100 MeV-cm2/mg

- SEL Immune >128 MeV-cm2/mg

- Saturated Cross Section cm2 per bit, 1.0E-11

- 1.2E-8 errors/device-day, Adams 90% geosynchronous

heavy ion

- Memory cell LET threshold: >128 MeV-cm2/mg

q QML Q & V compliant part

- AC and DC testing at factory

q Packaging options:

- 28-lead 50-mil center flatpack (0.490 x 0.74)

- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory

q VDD: 3.0Vto 3.6V

q Standard Microcircuit Drawing 5962-01517

PRODUCT DESCRIPTION

The UT28F256LV amorphous silicon anti-fuse PROM is a high

performance, asynchronous, radiation-hardened, 32K x 8

programmable memory device. The UT28F256LV PROM

features fully asychronous operation requiring no external clocks

or timing strobes. An advanced radiation-hardened twin-well

CMOS process technology is used to implement the

UT28F256LV. The combination of radiation-hardness, fast

access time, and low power consumption make the UT28F256LV

ideal for high speed systems designed for operation in radiation

environments.

A(14:0)

DECODER

MEMORY

ARRAY

CE

CONTROL

PE

LOGIC

OE

SENSE AMPLIFIER

PROGRAMMING

Figure 1. PROM Block Diagram

DQ(7:0)

1

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