1N4685 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
1N4685 Datasheet PDF : 7 Pages
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1N4678 to 1N4717
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
600
500
400
300
200
100
0
0
95 9602
40
80 120 160 200
Tamb – Ambient Temperature(°C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
15
10
5
IZ=5mA
0
–5
0
10
20 30
40
50
95 9600
VZ – Z-Voltage ( V )
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
1000
Tj=25°C
100
10
IZ=5mA
1
0
95 9598
5
10
15
20 25
VZ – Z-Voltage ( V )
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
1.3
VZtn=VZt/VZ(25°C)
1.2
TKVZ=10 x 10–4/K
8 x 10–4/K
1.1
6 x 10–4/K
4 x 10–4/K
2 x 10–4/K
1.0
0
–2 x 10–4/K
–4 x 10–4/K
0.9
0.8
–60
95 9599
0
60 120 180 240
Tj – Junction Temperature (°C )
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
200
150
VR=2V
Tj=25°C
100
50
0
0
95 9601
5
10
15
20
25
VZ – Z-Voltage ( V )
Figure 5. Diode Capacitance vs. Z-Voltage
100
10
Tj=25°C
1
0.1
0.01
0.001
0
95 9605
0.2 0.4 0.6 0.8 1.0
VF – Forward Voltage ( V )
Figure 6. Forward Current vs. Forward Voltage
Document Number 85586
Rev. 1.4, 18-Feb-05
www.vishay.com
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