Sonic Fast Recovery Diode
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DHG 30 IM 600 PC
1
3
DHG 30 IM 600 PC
VRRM =
IFAV =
t rr =
advanced
600 V
30 A
35 ns
2
Backside: cathode
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Housing: TO-263 (D2Pak)
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
Symbol Definition
Conditions
min. typ. max.
VRRM
IR
VF
max. repetitive reverse voltage
reverse current
forward voltage
VR =
VR =
IF =
IF =
IF =
IF =
600 V
600 V
30 A
60 A
30 A
60 A
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 150°C
600
50
5
2.37
3.18
2.22
3.11
IFAV
VF0
rF
RthJC
T VJ
Ptot
I FSM
I RM
trr
average forward current
rectangular
threshold voltage
slope resistance
for power loss calculation only
d = 0.5
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
t = 10 ms (50 Hz), sine
reverse recovery time
IF = 35 A; VR = 400 V
-diF/dt = 600 A/µs
TC = 95°C
TVJ = 150°C
TC =
TVJ =
TVJ =
TVJ =
TVJ =
TVJ =
25°C
45°C
25 °C
°C
25 °C
°C
30
1.31
29.2
0.60
-55
150
210
200
12
tbd
35
tbd
CJ
junction capacitance
VR = 400 V; f = 1 MHz
TVJ = 25°C
16
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2008 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20081031