STGD5NB120SZ-1 데이터 시트보기 (PDF) - STMicroelectronics
부품명
상세내역
제조사
STGD5NB120SZ-1 Datasheet PDF : 13 Pages
| |||
STGD5NB120SZ-1 - STGD5NB120SZ
Table 3: Absolute Maximum ratings
Symbol
Parameter
VCES Collector-Emitter Voltage (VGS = 0)
VECR Emitter-Collector Voltage
VGE Gate-Emitter Voltage
IC
Collector Current (continuous) at TC = 25°C
IC
Collector Current (continuous) at TC = 100°C
ICM ( ) Collector Current (pulsed)
PTOT Total Dissipation at TC = 25°C
Derating Factor
Eas (1)
Single Pulse Avalanche Energy at Tj = 25°C
Single Pulse Avalanche Energy at Tj = 100°C
Tstg Storage Temperature
Tj
Operating Junction Temperature range
( ) Pulse width limited by safe operating area
(1) VCE = 50 V , IAV = 3.3 A
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Value
1200
20
±20
10
5
20
55
0.44
10
7
–55 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
mJ
mJ
°C
°C
Min.
Typ.
Max.
2.27
100
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Unit
VBR(CES) Collector-Emitter Breakdown IC = 10 mA, VGE = 0 V
1200
V
Voltage
ICES
Collector cut-off Current
(VGE = 0)
VCE = 900 V
VCE = 900 V, Tj = 125 °C
50
µA
250
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0 V
±100 nA
VGE(th) Gate Threshold Voltage
VCE = VGE, IC = 250 µA
2
5
V
VGE
Gate Emitter Voltage
VCE =2.5 V, IC = 2 A,
Tj = 25÷125°C
6.5
V
VCE(sat)
Collector-Emitter Saturation VGE = 15V, IC = 5 A
Voltage
VGE = 15V, IC = 5 A, Tj =125°C
1.3
2.0
V
1.2
V
2/13
Share Link: 