C2M0160120D View Datasheet(PDF) - Cree, Inc
Part Name
Description
Manufacturer
C2M0160120D Datasheet PDF : 9 Pages
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Typical Performance
20
Conditions:
VDS = 20 V
tp < 200 µs
15
TJ = 150 °C
10
TJ = 25 °C
TJ = -55 °C
5
0
0
-5
2
4
6
8
10
12
14
Gate-Source Voltage, VGS (V)
Figure 7. Typical Transfer Characteristic
For Various Temperatures
-4
-3
-2
-1
0
0
Condition:
VGS = -5 V
TJ = 25 °C
tp < 50 µs
-5
VGS = 0 V
-10
VGS = -2 V
-15
-5
-4
-3
-2
-1
0
0
Condition:
VGS = -5 V
TJ = -55 °C
tp < 50 µs
-5
VGS = 0 V
-10
-15
VGS = -2 V
-20
-25
-30
Drain-Source Voltage, VDS (A)
Figure 8. Typical Body Diode Characteristic
TJ = -55 ºC
-5
-4
-3
-2
-1
0
0
VGS = -5 V
Condition:
TJ = 150 °C
tp < 50 µs
-5
VGS = 0 V
-10
-15
-20
-20
VGS = -2 V
-25
-25
-30
Drain-Source Voltage, VDS (A)
Figure 9. Typical Body Diode Characteristic
TJ = 25 ºC
3.5
Conditions
VDS = 10 V
3.0
IDS = 0.5 mA
2.5
Typ
2.0
Min
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
Junction Temperature TJ (°C)
Figure 11. Typical and Minimum Threshold Voltage vs.
Temperature
-30
Drain-Source Voltage, VDS (A)
Figure 10. Typical Body Diode Characteristic
TJ = 150 ºC
25
Conditions:
IDS = 10 A
20 IGS = 1 mA
VDS = 800 V
TJ = 25 °C
15
10
5
0
-5
0
5
10
15
20
25
30
35
Gate Charge, QG (nC)
Figure 12. Typical Gate Charge Characteristic 25 ºC
4
C2M0160120D Rev. -
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