G10N60A(2007) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
G10N60A Datasheet PDF : 11 Pages
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SGB10N60A
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-263-3-2
Type
SGB10N60A
VCE
IC
VCE(sat)
Tj
Marking
Package
600V 10A
2.3V
150°C G10N60A PG-TO-263-3-2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 10 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
Short circuit withstand time2
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering MSL1)
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Value
Unit
600
V
A
20
10.6
40
40
±20
V
70
mJ
10
µs
92
W
-55...+150
°C
245
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 July 07
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